irfhm8228pbf hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity irfhm8228pbf pqfn 3.3 mm x 3.3 mm tape and reel 4000 IRFHM8228TRPBF v dss 25 v r ds(on) max (@ v gs = 10v) 5.2 ? (@ v gs = 4.5v) 8.7 qg (typical) 9.0 ? nc i d (@t c (bottom) = 25c) 25 ? a m ? ? ? v gs max 20 v features benefits low thermal resistance to pcb (<3.7c/w) enable better thermal dissipation low profile (<1.05 mm) increased power density industry-standard pinout results in multi-vendor compatibility compatible with existing surface mount techniques ?? easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, consumer qualification increased reliability notes ? through ? are on page 10 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 19 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 65 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 41 ?? i dm pulsed drain current ? 260 p d @t a = 25c power dissipation ? 2.8 w p d @t c(bottom) = 25c power dissipation ? 34 linear derating factor ? 0.023 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t a = 70c continuous drain current, v gs @ 10v 15 i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 25 ? applications ?? control or synchronous mosfet for synchronous buck converter ? pqfn 3.3x3.3 mm ? s g s s d d d d d 1 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 downloaded from: http:///
? irfhm8228pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 3.7 r ? jc (top) junction-to-case ? CCC 41 c/w r ? ja junction-to-ambient ? CCC 44 r ? ja (<10s) junction-to-ambient ? CCC 29 thermal resistance avalanche characteristics parameter typ. max. units e as single pulse avalanche energy ? CCC 50 mj d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 25 CCC CCC v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient CCC 18 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 4.2 5.2 m ? v gs = 10v, i d = 20a ? CCC 6.7 8.7 v gs = 4.5v, i d = 16a ? v gs(th) gate threshold voltage 1.35 1.8 2.35 v v ds = v gs , i d = 25a ? v gs(th) gate threshold voltage coefficient CCC -6.6 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 20v, v gs = 0v CCC CCC 150 v ds = 20v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v gfs forward transconductance 63 CCC CCC s v ds = 10v, i d = 20a q g total gate charge CCC 18 CCC nc v gs = 10v, v ds = 13v, i d = 20a q g total gate charge CCC 9.0 14 q gs1 pre-vth gate-to-source charge CCC 2.7 CCC ? v ds = 13v q gs2 post-vth gate-to-source charge CCC 1.0 CCC nc v gs = 4.5v q gd gate-to-drain charge CCC 3.1 CCC ? i d = 20a q godr gate charge overdrive CCC 2.2 CCC ? q sw switch charge (q gs2 + q gd ) CCC 4.1 CCC ? q oss output charge CCC 9.7 CCC nc v ds = 16v, v gs = 0v r g gate resistance CCC 1.7 CCC ? ? t d(on) turn-on delay time CCC 11 CCC v dd = 13v, v gs = 4.5v t r rise time CCC 22 CCC ns i d = 20a t d(off) turn-off delay time CCC 13 CCC ? r g =1.8 ? t f fall time CCC 6.2 CCC ? c iss input capacitance CCC 1667 CCC v gs = 0v c oss output capacitance CCC 456 CCC pf v ds = 10v c rss reverse transfer capacitance CCC 195 CCC ? ? = 1.0mhz diode characteristics parameter min. typ. max. units conditions i s continuous source current CCC CCC 25 ?? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 260 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.0 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time CCC 14 21 ns t j = 25c, i f = 20a, v dd = 13v q rr reverse recovery charge CCC 10 15 nc di/dt = 260a/s ? downloaded from: http:///
? irfhm8228pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v v ds = 5.0v i d = 20a fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 150c vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.0v 2.75v bottom 2.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.0v 2.75v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0 2 4 6 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width downloaded from: http:///
? irfhm8228pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 fig 8. maximum safe operating area fig 11. maximum effective transient thermal impedance, junction-to-case 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology ? fig 7. typical source-drain diode forward voltage 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 9. maximum drain current vs. case temperature fig 10. drain-toCsource breakdown voltage -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by source bonding technology ? downloaded from: http:///
? irfhm8228pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 6 10 14 18 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c fig 12. on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche event: pu lse current vs. pulse width 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.4a 9.2a bottom 20a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) downloaded from: http:///
? irfhm8228pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18b. gate charge waveform fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms fig 17a. switching time test circuit fig 17b. switching time waveforms vdd ? downloaded from: http:///
? irfhm8228pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 the typical application topology for this product is the sy nchronous buck converter. these converters operate at high frequencies (typically around 400 khz). during turn-on and turn-o ff switching cycles, the high di/dt currents circulating in the parasitic elements of the circuit induce high voltage ringing which may exceed the device rating and lead to undesirable effects. one of the major contributors to the incr ease in parasitics is the pc b power circuit inductance. this section introduces a simple guideline that mitigates the e ffect of these parasitics on the performance of the circuit and provides reliable operation of the devices. to reduce high frequency switching noise and the effects of electromagnetic interference (emi) when the control mosfet (q1) is turned on, the layout shown in figur e 19 is recommended. the input bypass capacitors, control mosfet and output capacitors are placed in a tight loop to minimize parasitic inductance which in turn lowers the amplitude of the switch node ringing, and minimizes expos ure of the mosfets to repet itive avalanche conditions. fig 19. placement and layout guidelines placement and layout guidelines downloaded from: http:///
? irfhm8228pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3mm x 3.3mm outline package details pqfn 3.3mm x 3.3mm outline part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf downloaded from: http:///
? irfhm8228pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 pqfn 3.3mm x 3.3mm outline tape and reel bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape bo w p 1 ao ko dimension (mm) code min max dimension (inch) min max 3.50 3.70 .138 .146 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 3.50 3.70 .138 .146 description w 1 qty 4000 reel diameter 13 inches ? ? ? note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? irfhm8228pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback june 30, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ?? ) rohs compliant yes consumer ?? (per jedec jesd47f ??? guidelines) ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standar d at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.25mh, r g = 50 ? , i as = 20a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited to 25a by source bonding technology. revision history date comments 6/5/14 ?? updated schematic on page 1. ?? updated part marking on page 8. ?? updated tape and reel on page 9. 6/30/14 ?? remove sawn package outline on page 8. downloaded from: http:///
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